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hmnshudhmn24/igbt-accelerated-aging-nasa

⚑ IGBT Accelerated Aging Dataset β€” NASA A NASA prognostics dataset tracking accelerated thermal aging of Insulated Gate Bipolar Transistors (IGBTs) β€” for fault detection, remaining useful life prediction, and power electronics research. 🧭 Overview This dataset contains experimental data from accelerated thermal aging of IGBTs (Insulated Gate Bipolar Transistors) under various stress conditions. Collected by NASA's Prognostics Center of Excellence, it is… See the full description on the dataset page: https://huggingface.co/datasets/hmnshudhmn24/igbt-accelerated-aging-nasa.

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Dataset Card

⚑ IGBT Accelerated Aging Dataset β€” NASA

A NASA prognostics dataset tracking accelerated thermal aging of Insulated Gate Bipolar Transistors (IGBTs) β€” for fault detection, remaining useful life prediction, and power electronics research.

🧭 Overview

This dataset contains experimental data from accelerated thermal aging of IGBTs (Insulated Gate Bipolar Transistors) under various stress conditions. Collected by NASA's Prognostics Center of Excellence, it is widely used in:

  • β€”Predictive maintenance research
  • β€”Remaining Useful Life (RUL) estimation
  • β€”Power electronics fault detection
  • β€”Prognostics & Health Management (PHM)

πŸ“ Dataset Folders

FolderDescription
Thermal Overstress β€” DC GateThermal cycling with DC waveforms. Device failed due to latch-up. Tail current changes observed as failure precursor. Single IGBT.
Thermal Overstress β€” Square SignalThermal cycling with square waveform at gate. Mimics real switching scenarios beyond safe operating area. Single IGBT.
Thermal Overstress β€” Square Signal + SMUSquare waveform aging of 4 devices + SMU characterization of threshold voltage, breakdown voltage, and leakage current.
SMU Data β€” New DevicesElectrical characterization of 40 pristine components (MOSFETs IRF520Npbf and IRG4BC30K). Baseline reference data.

πŸ“ Parameters Measured

ParameterDescription
Collector CurrentTransient current during turn-OFF
Gate VoltageApplied gate waveform
Collector-Emitter VoltageSwitching voltage across device
Threshold VoltageSMU characterization parameter
Breakdown VoltageSMU characterization parameter
Leakage CurrentSMU characterization parameter
TemperatureDetected via infrared sensor

πŸ”¬ Devices Covered

DeviceType
IRF520NpbfN-Channel MOSFET
IRG4BC30KIGBT

⚑ Quick Start

python
import pandas as pd
import scipy.io as sio
import os

# Load SMU characterization data (if .csv)
df = pd.read_csv("smu_data.csv")
print(df.head())

# Load MATLAB .mat files (if applicable)
data = sio.loadmat("igbt_aging_data.mat")
print(data.keys())

πŸ’‘ Suggested Use Cases

  1. 1.Remaining Useful Life (RUL) Prediction β€” Predict how many cycles before device failure
  2. 2.Fault Detection & Classification β€” Detect latch-up and other failure modes early
  3. 3.Anomaly Detection β€” Identify abnormal tail current behavior as failure precursor
  4. 4.Degradation Modeling β€” Track electrical parameter drift over aging cycles
  5. 5.Transfer Learning β€” Use pristine SMU data as baseline for domain adaptation
  6. 6.Predictive Maintenance β€” Build real-world PHM pipelines for power electronics